Thin die release for semiconductor device assembly

ABSTRACT

Methods for releasing thinned semiconductor dies from a mount tape and associated apparatuses are disclosed. In one embodiment, a sacrificial layer may be disposed at a back side of thinned substrate including semiconductor dies. The sacrificial layer includes materials soluble in contact with a fluid (and/or vapor). A sheet of perforated mount tape may be attached to the sacrificial layer and an ejection component may be provided under a target semiconductor die to be released. The ejection component is configured to create a locally confined puddle of the fluid under the target semiconductor die such that the sacrificial layer is removed to release the target semiconductor die from the mount tape. Further, a support component may be provided to pick up the target semiconductor die after the target semiconductor die is released from the mount tape.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a division of U.S. application Ser. No. 16/713,309,filed Dec. 13, 2019, which is incorporated herein by reference in itsentirety.

TECHNICAL FIELD

The present disclosure generally relates to semiconductor deviceassemblies, and more particularly relates to releasing thin dies for asemiconductor device assembly.

BACKGROUND

Semiconductor packages typically include one or more semiconductor dies(e.g., memory chip, microprocessor chip, imager chip) mounted on asubstrate, encased in a protective covering. The semiconductor dies mayinclude functional features, such as memory cells, processor circuits,or imager devices, as well as bond pads electrically connected to thefunctional features. The bond pads can be electrically connected tocorresponding conductive structures of the substrate, which may becoupled to terminals outside the protective covering such that thesemiconductor die can be connected to higher level circuitry.

In some semiconductor packages, two or more semiconductor dies may bestacked on top of each other to reduce footprints of the semiconductorpackages (which may be referred to as multi-chip packages). The stackedsemiconductor dies may include three-dimensional interconnects (e.g.,through-silicon vias (TSVs)) to route electrical signals between thesemiconductor dies. The semiconductor dies may be thinned to reduceoverall thicknesses of such semiconductor packages, as well as tomitigate issues related to forming the three-dimensional interconnectsthrough the stacked semiconductor dies. Typically, a sheet of mount tapeis attached to a front side of a substrate (e.g., a wafer) having thesemiconductor dies fabricated thereon such that the substrate may bethinned from its back side. Further, the substrate may be diced tosingulate individual semiconductor dies while attached to an adhesivelayer of the mount tape. Subsequently, individual semiconductor dies maybe picked up from the adhesive layer—e.g., ejected from the adhesivelayer by applying forces. When the substrate (hence the semiconductordies) is thinned below certain thicknesses (e.g., 50 μm or less),however, the thinned semiconductor dies may easily experience unevenforces sufficient to generate micro-cracks while they are ejected fromthe adhesive layer. Such micro-cracks may reduce yield or presentreliability issues for the semiconductor dies. In some cases, athroughput time of the dicing process may increase to reduce risks ofgenerating micro-cracks as final thicknesses of the substrate furtherdecrease.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the present technology can be better understood withreference to the following drawings. The components in the drawings arenot necessarily to scale. Instead, emphasis is placed on illustratingclearly the principles of the present technology.

FIGS. 1A through 1D illustrate a process of releasing thin dies for asemiconductor device assembly in accordance with an embodiment of thepresent technology.

FIGS. 2 and 3 are flowcharts illustrating methods of releasing thin diesfor a semiconductor device assembly in accordance with embodiments ofthe present technology.

DETAILED DESCRIPTION

Specific details of several embodiments for releasing thinnedsemiconductor dies (“thin die release”) for semiconductor deviceassemblies, and associated apparatuses and methods are described below.The thin die release described herein may improve yield or mitigatereliability issues for the thinned semiconductor dies during the dicingprocess, which in turn, improve yield and reliability performances ofthe semiconductor device assemblies. The term “semiconductor device ordie” generally refers to a solid-state device that includes one or moresemiconductor materials. Examples of semiconductor devices include logicdevices, memory devices, microprocessors, or diodes, among others. Suchsemiconductor devices may include integrated circuits or components,data storage elements, processing components, and/or other featuresmanufactured on semiconductor substrates. Further, the term“semiconductor device or die” can refer to a finished device or to anassembly or other structure at various stages of processing beforebecoming a finished device. Depending upon the context in which it isused, the term “substrate” can refer to a wafer-level substrate or to asingulated, die-level substrate. Also, a substrate may include asemiconductor wafer, a package support substrate, an interposer, asemiconductor device or die, or the like. A person having ordinary skillin the relevant art will recognize that suitable steps of the methodsdescribed herein can be performed at the wafer level or at the dielevel.

As used herein, the terms “vertical,” “lateral,” “down,” “up,” “upper,”and “lower” can refer to relative directions or positions of features inthe semiconductor device assemblies in view of the orientation shown inthe Figures. For example, “upper” or “uppermost” can refer to a featurepositioned closer to the top of a page than another feature. Theseterms, however, should be construed broadly to include semiconductordevices having other orientations. A person skilled in the relevant artwill also understand that the technology may have additionalembodiments, and that the technology may be practiced without several ofthe details of the embodiments described herein with reference to FIGS.1A-1D, 2, and 3 .

FIGS. 1A through 1D illustrate a process of thin die release (i.e.,releasing thinned semiconductor dies from a mount tape) forsemiconductor device assembly (“assemblies”) in accordance with anembodiment of the present technology. As described herein, the thin dierelease utilizes a process employing a fluid (i.e., a liquid or vapor)to remove a layer (e.g., a sacrificial layer, which may be an adhesivelayer in some cases) disposed between the thin die and the mount tape.That is, in contrast to alternative approaches that apply mechanicalforces (e.g., with a pointed structure resembling a needle, in somecases) to separate the thin die from an adhesive layer of the mounttape, the thin die release removes (e.g., dissolves, chemically etches)the sacrificial layer using the fluid (e.g., a chemical solution, asolvent and/or water, depending on the materials included in thesacrificial layer) to release the thin die from the mount tape. As such,the thin die may be ejected from the mount tape without mechanicalforces exerted to the thin die (e.g., reducing the risk of die cracks),thereby improving yield or reliability performance of the dicingprocess. Further, the thin die release may improve a throughput time ofthe dicing process or decrease thicknesses of the thin dies as theheights of the assemblies shrink.

The thin die release may use a perforated mount tape (which may bereferred to as a perforated dicing tape) to inject the fluid through theopenings in the mount tape such that the fluid may dissolve (orotherwise remove) a portion of the sacrificial layer located between atarget semiconductor die to be released and the mount tape. Further, thethin die release may employ an ejection component configured toselectively dispense the fluid to the portion of the sacrificial layerunder the target semiconductor die to be released. In some embodiments,an apparatus may include the perforated mount tape and the ejectioncomponent. The apparatus may also include a supporting componentconfigured to lift the target semiconductor die after removing thesacrificial layer between the target semiconductor die and the mounttape.

FIG. 1A illustrates a cross-sectional diagram 100 a of a substrate 105that includes semiconductor dies (e.g., semiconductor dies 110 a through110 c depicted in FIG. 1C) fabricated on its front side 106. Thesubstrate 105 may have been thinned from its back side on which asacrificial layer 115 is disposed (e.g., the back side is coated withthe sacrificial layer 115). In some embodiments, a thickness of thesubstrate 105 may be approximately 50 μm or less. The sacrificial layer115 may include one or more materials configured to dissolve in contactwith a fluid (e.g., solvent, water, or both in a liquid phase or in avapor phase). In some embodiments, the apparatus may include a coatingcomponent configured to form the sacrificial layer 115 on the back sideof the substrate 105 that includes the target semiconductor die 110 c asdepicted in FIG. 1C.

FIG. 1B illustrates a cross-sectional diagram 100 b of the substrate 105with the sacrificial layer 115 mounted on a sheet of mount tape 120. Thesubstrate 105 may be positioned between film frames 133. The mount tape120 may include a tape adhesive layer 125 configured to attach to thesacrificial layer 115 and a tape backing 130. Further, the mount tape120 includes a plurality of openings 140. In some embodiments, the mounttape 120 may include the sacrificial layer 115 (e.g., above the tapeadhesive layer 125) such that a thinned substrate (e.g., the substrate105, without the sacrificial layer 115) may be attached to thesacrificial layer 115 when the thinned substrate is positioned onto themount tape 120. In such embodiments, the sacrificial layer 115 may beadhesive to a surface with which the sacrificial layer 115 comes incontact (e.g., a back side of the substrate 105).

FIG. 1C illustrates a cross-sectional diagram 100 c of the substrate 105with the sacrificial layer 115 mounted on the sheet of mount tape 120,after the substrate 105 is diced through dicing lanes 135. In someembodiments, the apparatus may include a dicing component configured todice the substrate 105 through the dicing lanes 135 of the substrate 105to singulate the semiconductor dies 110 from the substrate 105 includingthe target semiconductor die 110 c.

In some embodiments, the dicing component may be configured with a bladeto dice the substrate 105 (e.g., blade-dicing). In other embodiments,the dicing component may be configured with a plasma source to performlaser-dicing (which may be referred to as a stealth dicing). In somecases, the sacrificial layer 115 may include materials dissolvable incontact with a solvent when the blade-dicing is used. In other cases,the sacrificial layer 115 may include water-soluble material when thelaser-dicing is used. When the substrate 105 is diced, using either theblade-dicing or the laser-dicing, to singulate semiconductor dies 110,debris may be generated on the front side of the substrate 105. In someembodiments, such debris may be collected by a support component (e.g.,the support component 150 depicted in the diagram 100 d in FIG. 1D).

In some embodiments, the sacrificial layer 115 may be diced togetherwith the substrate 105 as illustrated in the diagram 100 c. In otherembodiments, the sacrificial layer 115 may be diced partially or remainintact (not shown). The diagram 100 c depicts the singulatedsemiconductor dies 110 (e.g., semiconductor die 110 a, semiconductor die110 b, semiconductor die 110 c) including a target semiconductor die(e.g., semiconductor die 110 c) to be release from the mount tape 120(i.e., to be released from the tape adhesive layer 125 of the mount tape120). Further, the set of openings 140 includes multiple openings (e.g.,opening 140 a, opening 140 b, opening 140 c) under each semiconductordie (e.g., the target semiconductor die 110 c). Some openings under eachsemiconductor die 110 may facilitate a fluid to be injected to accessthe sacrificial layer 115 (e.g., the fluid entering into the mount tape120 via the opening 140 b) underneath the semiconductor die 110 whileother openings under the semiconductor die 110 may facilitate the fluidto transport the dissolved sacrificial layer (or a by-product of the wetprocess between the fluid and the sacrificial layer) away from thesemiconductor die 110 (e.g., the fluid exiting the mount tape 120 viathe opening 140 a and/or the opening 140 c).

Although the diagram 100 c depicts three (or four) openings under eachsemiconductor die 110, the present technology is not limited thereto.For example, the mount tape may include a greater quantity of openings(e.g., 6, 10, 20, or even more) under each semiconductor die 110 or alesser quantity of openings (e.g., two (2) openings, one for an inletand another for an outlet) under each semiconductor die 110. Further,different semiconductor dies 110 of the substrate 105 may correspond todifferent quantities of openings. In some embodiments, a perforateddicing tape (e.g., a sheet of mount tape 120) may include an overallpattern of the openings that resembles a pattern of semiconductor diesplaced on a semiconductor wafer (e.g., a photolithography wafer map).For example, areas with a relatively dense distribution of openings inthe perforated dicing tape may correspond to locations of semiconductordies 110 on the substrate 105. Also, areas with a relatively sparsedistribution of openings in the perforated dicing tape may correspond todicing lanes 135 on the substrate 105. Additionally or alternatively,the openings may include any shape suitable for facilitating a fluidentering and/or exiting the mount tape, such as a circular shape, anelliptic shape, an elongated elliptic shape, a square shape, arectangular shape, an elongated rectangular shape, or a combinationthereof.

FIG. 1D illustrates a cross-sectional diagram 100 d of the substrate 105diced to have individual semiconductor dies 110 singulated. Individualsemiconductor dies 110 are attached to the tape adhesive layer 125 ofthe mount tape 120 via the sacrificial layer 115, except the targetsemiconductor die 110 c. The diagram 100 d depicts that a portion of thesacrificial layer 115 under the target semiconductor die 110 c has beenremoved as described in further details below. The diagram 100 dillustrates an ejection component 160 configured to release onesemiconductor die (e.g., semiconductor die 110 a, semiconductor die 110b, semiconductor die 110 c) at a time. For example, the ejectioncomponent 160 is positioned under the target semiconductor die 110 c inFIG. 1D. The ejection component 160 covers the multiple openings underthe target semiconductor die 110 c (e.g., openings 140 a through 140 c).Further, the diagram 100 d illustrates a support component 150configured to buttress (e.g., shore up) the target semiconductor die 110c from the front side 106 of the target semiconductor die 110 c.

The ejection component 160 may be configured to apply a fluid toward thesacrificial layer disposed at the back side of the target semiconductordie 110 c, and to collect the fluid (and dissolved sacrificial layer)away from the target semiconductor die 110 c. That is, the ejectioncomponent 160 may be regarded to create a puddle of the fluid in contactwith the sacrificial layer to remove, where the puddle is confined tothe perimeter of the target semiconductor die 110 c. In someembodiments, the ejection component 160 may be configured to dispensethe fluid at its central portion and to collect the fluid (and dissolvedsacrificial layer) at its peripheral (or edge) portion—e.g.,center-dispense and edge-vacuum.

In this regard, the ejection component 160 includes an inlet (e.g.,inlet 165) at its central portion. The inlet may be configured to supplythe fluid toward the back side of the target semiconductor die 110 c viasome of the openings the ejection component 160 covers (e.g., opening140 b). As such, the ejection component 160, by injecting the fluidthrough the mount tape 120, may remove the sacrificial layer (e.g., thesacrificial layer 115 c depicted in the diagram 100 c) disposed betweenthe back side of the target semiconductor die 110 c and the tapeadhesive layer 125 of the mount tape 120. As described above, thesacrificial layer 115 includes one or more materials configured todissolve in contact with the fluid. Further, the ejection component 160includes an outlet (e.g., outlet 170) at its peripheral portion suchthat the ejection component 160 may provide vacuum suction through theoutlet. The outlet may be configured to collect, through some of theopenings the ejection component 160 covers (e.g., opening 140 a, opening140 c), by-products (e.g., dissolved sacrificial layer, by-productsgenerated as a result of injecting the fluid toward the sacrificiallayer), the fluid, or both. As depicted in the diagram 100 d, theperipheral portion of the ejection component 160 may, at leastpartially, surround the central portion of the ejection component.

Further, the inlet 165 and the outlets 170 may be interchangeable. Thatis, in some embodiments, the outlets 170 may be used to supply (e.g.,dispense, inject) the fluid toward the back side of the targetsemiconductor die 110 c while the inlet 165 may be used to collect theby-products and/or the fluid—e.g., edge-dispense and center-vacuum.Additionally or alternatively, the ejection component 160 may beconfigured to confine the fluid applied toward the back side of thetarget semiconductor die within a boundary of the ejection component 160(e.g., boundaries 175) that correlates to a perimeter of the targetsemiconductor die 110 c. In some embodiments, the ejection component 160may confine the fluid using the vacuum (e.g., edge-vacuum,center-vacuum) or a sealing at the boundary of the ejection component160, or both. Additionally or alternatively, the ejection component 160may push into the tape backing 130 to prevent the fluid from spreadingtoward other semiconductor dies adjacent to the target semiconductor die110 c.

The support component 150 provides mechanical support for the targetsemiconductor die 110 c such that the target semiconductor die 110 c maynot fall out from the substrate 105 when the sacrificial layer 115 underthe target semiconductor die 110 c is completely removed as a result ofapplying the fluid to the sacrificial layer 115. In some embodiments,the support component 150 may be configured to provide suction to liftthe target semiconductor die from the mount tape 120 when the targetsemiconductor die 110 c is released from the mount tape 120—e.g., whenthe portion of sacrificial layer 115 under the target semiconductor die110 c (e.g., sacrificial layer 115 c) is completely removed such thatthe target semiconductor die 110 c is no longer attached to the mounttape 120. In some embodiments, the support component 150 may include achuck having vacuum suction to pick up the target semiconductor die. Inother embodiments, the support component 150 may include anelectrostatic chuck (ESC) to pick up the target semiconductor die. Insome embodiments, the support component 150 may be further configured tocollect debris from the front side of the target semiconductor die 110c, where the debris may be generated as a result of the substrate 105being diced to singulate the target semiconductor die 110 c as describedwith reference to FIG. 1C. Once the target semiconductor die 110 c isreleased from the mount tape 120 and picked up by the support component150, the target semiconductor die 110 c may be dried with a nozzleconfigured to apply nitrogen (N₂) gas or air.

FIG. 2 is a flowchart 200 illustrating a method of releasing thinnedsemiconductor dies for a semiconductor device assembly in accordancewith an embodiment of the present technology. The flowchart 200 mayinclude aspects of methods as described with reference to FIGS. 1Athrough 1D.

The method includes thinning a substrate from a back side thereof, thesubstrate including a plurality of semiconductor dies formed on a frontside of the substrate (box 210). The method further includes attaching asheet of mount tape on the back side of the substrate that has beenthinned, the sheet of mount tape including a plurality of openingsconfigured to facilitate a fluid accessing the back side of thesubstrate (box 215). The method further includes dicing the substrate tosingulate individual semiconductor dies of the plurality ofsemiconductor dies such that each individual semiconductor die isattached to the sheet of mount tape (box 220). The method furtherincludes releasing a target semiconductor die of the plurality ofsemiconductor dies from the sheet of mount tape (box 225).

In some embodiments, the plurality of openings includes multipleopenings under each semiconductor die of the plurality of semiconductordies. In some embodiments, the method may further include applying thefluid to the back side of the substrate through multiple openings of theplurality of openings under the target semiconductor die, where thefluid is configured to dissolve a sacrificial layer disposed at the backside of the substrate, and where releasing the target semiconductor dieis based at least in part on applying the fluid. In some embodiments,the fluid includes a solvent, water, or both in a liquid phase or in avapor phase.

In some embodiments, the method may further include confining the fluidapplied to the back side of the substrate within a boundary thatcorrelates to a perimeter of the target semiconductor die. In someembodiments, the method may further include collecting, from the backside of the substrate, by-products generated as a result of applying thefluid to the back side of the substrate, the fluid, or both. In someembodiments, the method may further include attaching a supportcomponent to the target semiconductor die before releasing the targetsemiconductor die from the sheet of mount tape. In some embodiments, themethod may further include forming, after thinning the substrate, asacrificial layer on the back side of the substrate, the sacrificiallayer including one or more materials configured to dissolve in contactwith the fluid. In some embodiments, the sheet of mount tape includes asacrificial layer configured to attach to the back side of thesubstrate, where the sacrificial layer includes one or more materialsconfigured to dissolve in contact with the fluid.

FIG. 3 is a flowchart 300 illustrating a method of releasing thinnedsemiconductor dies for a semiconductor device assembly in accordancewith an embodiment of the present technology. The flowchart 300 mayinclude aspects of methods as described with reference to FIGS. 1Athrough 1D.

The method includes forming a sacrificial layer on a back side of asubstrate including a target semiconductor die, the sacrificial layerincluding one or more materials configured to dissolve in contact with afluid of a solvent, water, or both (box 310). The method furtherincludes attaching an adhesive mount tape to the sacrificial layer, theadhesive mount tape including a plurality of openings configured tofacilitate the fluid accessing the sacrificial layer (box 315). Themethod further includes dicing, from a front side of the substrate, thesubstrate to singulate the target semiconductor die that is attached tothe adhesive mount tape via the sacrificial layer (box 320). The methodfurther includes releasing the target semiconductor die from theadhesive mount tape when the sacrificial layer is removed (box 325).

In some embodiments, the method may further include applying the fluidto the sacrificial layer through a subset of openings of the plurality,the subset of openings located under the target semiconductor die. Insome embodiments, the method may further include restricting the fluidapplied to the sacrificial layer from spreading beyond a boundary thatcorrelates to a perimeter of the target semiconductor die. In someembodiments, the method may further include collecting the fluid and thesacrificial layer dissolved in contact with the fluid, through thesubset of openings. In some embodiments, the method may further includeproviding, from the front side of the substrate, a support component tobuttress the target semiconductor die before releasing the targetsemiconductor die, the support component configured to provide vacuumsuction to the target semiconductor die. In some embodiments, the methodmay further include lifting, using the support component, the targetsemiconductor die when the target semiconductor die is released from theadhesive mount tape as a result of applying the fluid to the sacrificiallayer.

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, embodiments from two or more of the methods may becombined.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. For example, although the diagram 100 d illustrates theejection component 160 configured to release one semiconductor die at atime (and the corresponding support component 150 that supports onesemiconductor die), the present technology is not limited thereto. Thatis, two or more ejection components 160 may be combined to release twoor more semiconductor dies at a time, in conjunction with two or moresupport components 150. Further, the two or more semiconductor dies maybe adjacent to each other or separated from each other.

In addition, while in the illustrated embodiments certain features orcomponents have been shown as having certain arrangements orconfigurations, other arrangements and configurations are possible. Forexample, although the diagram 100 d depicts the ejection component 160with one inlet and two outlets, the present technology is not limitedthereto. That is, the ejection component 160 may be configured toinclude more than one inlet and/or any quantity of outlets. Further, theejection component 160 may be modified to include a different relativepositioning of the inlet and the outlet than the embodiment depicted inthe diagram 100 d without losing its purposes and/or functions withinthe scope of the present technology. In addition, certain aspects of thepresent technology described in the context of particular embodimentsmay also be combined or eliminated in other embodiments.

The devices discussed herein, including a semiconductor device, may beformed on a semiconductor substrate or die, such as silicon, germanium,silicon-germanium alloy, gallium arsenide, gallium nitride, etc. In somecases, the substrate is a semiconductor wafer. In other cases, thesubstrate may be a silicon-on-insulator (SOI) substrate, such assilicon-on-glass (SOG) or silicon-on-sapphire (SOP), or epitaxial layersof semiconductor materials on another substrate. The conductivity of thesubstrate, or sub-regions of the substrate, may be controlled throughdoping using various chemical species including, but not limited to,phosphorous, boron, or arsenic. Doping may be performed during theinitial formation or growth of the substrate, by ion-implantation, or byany other doping means.

As used herein, including in the claims, “or” as used in a list of items(for example, a list of items prefaced by a phrase such as “at least oneof” or “one or more of”) indicates an inclusive list such that, forexample, a list of at least one of A, B, or C means A or B or C or AB orAC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase“based on” shall not be construed as a reference to a closed set ofconditions. For example, an exemplary step that is described as “basedon condition A” may be based on both a condition A and a condition Bwithout departing from the scope of the present disclosure. In otherwords, as used herein, the phrase “based on” shall be construed in thesame manner as the phrase “based at least in part on.”

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thescope of the invention. Rather, in the foregoing description, numerousspecific details are discussed to provide a thorough and enablingdescription for embodiments of the present technology. One skilled inthe relevant art, however, will recognize that the disclosure can bepracticed without one or more of the specific details. In otherinstances, well-known structures or operations often associated withmemory systems and devices are not shown, or are not described indetail, to avoid obscuring other aspects of the technology. In general,it should be understood that various other devices, systems, and methodsin addition to those specific embodiments disclosed herein may be withinthe scope of the present technology.

What is claimed is:
 1. A method comprising: thinning a substrate from aback side thereof, the substrate including a plurality of semiconductordies formed on a front side of the substrate; attaching a sheet of mounttape on the back side of the substrate that has been thinned, the sheetof mount tape including a plurality of openings configured to facilitatea fluid accessing the back side of the substrate; dicing the substrateto singulate individual semiconductor dies of the plurality ofsemiconductor dies such that each individual semiconductor die isattached to the sheet of mount tape; and releasing a targetsemiconductor die of the plurality of semiconductor dies from the sheetof mount tape.
 2. The method of claim 1, wherein the plurality ofopenings includes multiple openings under each semiconductor die of theplurality of semiconductor dies.
 3. The method of claim 1, furthercomprising: applying the fluid to the back side of the substrate throughmultiple openings of the plurality of openings under the targetsemiconductor die, the fluid configured to dissolve a sacrificial layerdisposed at the back side of the substrate, wherein releasing the targetsemiconductor die is based at least in part on applying the fluid. 4.The method of claim 3, wherein the fluid includes a solvent, water, orboth in a liquid phase or in a vapor phase.
 5. The method of claim 3,further comprising: confining the fluid applied to the back side of thesubstrate within a boundary that correlates to a perimeter of the targetsemiconductor die.
 6. The method of claim 3, further comprising:collecting, from the back side of the substrate, by-products generatedas a result of applying the fluid to the back side of the substrate, thefluid, or both.
 7. The method of claim 1, further comprising: attachinga support component to the target semiconductor die before releasing thetarget semiconductor die from the sheet of mount tape.
 8. The method ofclaim 1, further comprising: forming, after thinning the substrate, asacrificial layer on the back side of the substrate, the sacrificiallayer including one or more materials configured to dissolve in contactwith the fluid.
 9. The method of claim 1, wherein the sheet of mounttape includes a sacrificial layer configured to attach to the back sideof the substrate, the sacrificial layer including one or more materialsconfigured to dissolve in contact with the fluid.
 10. A methodcomprising: forming a sacrificial layer on a back side of a substrateincluding a target semiconductor die, the sacrificial layer includingone or more materials configured to dissolve in contact with a fluid ofa solvent, water, or both; attaching an adhesive mount tape to thesacrificial layer, the adhesive mount tape including a plurality ofopenings configured to facilitate the fluid accessing the sacrificiallayer; dicing, from a front side of the substrate, the substrate tosingulate the target semiconductor die that is attached to the adhesivemount tape via the sacrificial layer; applying the fluid to thesacrificial layer through a subset of one or more openings of theplurality of openings to at least partially dissolve the sacrificiallayer; and releasing the target semiconductor die from the adhesivemount tape when the sacrificial layer is removed.
 11. The method ofclaim 10, further comprising: restricting the fluid applied to thesacrificial layer through the subset of one or more openings fromspreading beyond a boundary that correlates to a perimeter of the targetsemiconductor die; and collecting the fluid and the sacrificial layerdissolved in contact with the fluid through an additional subset of oneor more openings of the plurality of openings.
 12. The method of claim10, further comprising: providing, from the front side of the substrate,a support component to buttress the target semiconductor die beforereleasing the target semiconductor die, the support component configuredto provide vacuum suction to the target semiconductor die; and lifting,using the support component, the target semiconductor die when thetarget semiconductor die is released from the adhesive mount tape as aresult of applying the fluid to the sacrificial layer.
 13. The method ofclaim 10, wherein: the plurality of openings includes: one or more firstopenings closer to a perimeter of the target semiconductor die than asecond opening; and the second opening; and the method furthercomprises: applying the fluid to the sacrificial layer through thesecond opening; and collecting the fluid and the sacrificial layerdissolved in contact with the fluid through the one or more firstopenings.